First Demonstration of Heterogeneous L-shaped Field Effect Transistor (LFET) for Angstrom Technology Nodes

Autor:	C.-Y. Yang, P.-J. Sung, M.-H. Chuang, C.-W. Chang, Y.-J. Shih, T.-Y. Huang, D. D. Lu, T.-C. Hong, X.-R. Yu, W.-H. Lu, S.-W. Chang, J.-J. Tsai, M.-K. Huang, T.-C. Cho, Y.-J. Lee, K.-L. Luo, C.-T. Wu, C.-J. Su, K.-H. Kao, T.-S. Chao, W.-F. Wu, Y.-H. Wang
Rok vydání:	2022
Zdroj:	2022 International Electron Devices Meeting (IEDM).
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::3fe9890c5b040625b4a1b5a87d64943a https://doi.org/10.1109/iedm45625.2022.10019487 Zobrazit plný text záznamu