Realization of high efficiency AlGaN-based multiple quantum wells grown on nano-patterned sapphire substrates
| Autor: | X. Z. Fang, Jing Lang, Liubing Wang, Nan Xie, Baiyin Liu, Weikun Ge, Na Zhang, Zhixin Qin, Jiaming Wang, Fujun Xu, Xinqiang Wang, Bo Shen, Xuelin Yang, Xiangning Kang, Yuanhao Sun |
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| Rok vydání: | 2021 |
| Předmět: |
010302 applied physics
Materials science business.industry Doping 02 engineering and technology General Chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Power (physics) Wavelength 0103 physical sciences Nano Sapphire Optoelectronics General Materials Science Quantum efficiency Current (fluid) 0210 nano-technology business Realization (systems) |
| Zdroj: | CrystEngComm. 23:1201-1206 |
| ISSN: | 1466-8033 |
| Popis: | Growth of AlGaN-based multiple quantum wells (MQWs) has been attempted on nano-patterned sapphire substrates (NPSSs). By adopting a critical-temperature approach and optimizing the growth conditions including the V/III ratio and Si doping level, high-efficiency AlGaN-based MQWs with an internal quantum efficiency (IQE) greater than 80% at room temperature are realized with an emission wavelength shorter than 280 nm. Taking such high IQE MQWs as the active region, a deep-ultraviolet light-emitting-diode (DUV-LED) device is fabricated and presents single peak emission with a wavelength of 276.1 nm. The light output power (LOP) of this device reaches 17.3 mW at an injection current of 100 mA, presenting an excellent device performance. |
| Databáze: | OpenAIRE |
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