Surface processes in low pressure chemical vapour deposition

Autor:	R. Cadoret, F. Hottier
Rok vydání:	1981
Předmět:	Silicon Kinetics Nucleation chemistry.chemical_element Chemical vapor deposition Condensed Matter Physics Inorganic Chemistry Monocrystalline silicon chemistry Chemical engineering Scientific method Materials Chemistry Deposition (phase transition) Physical chemistry Crystallite
Zdroj:	Journal of Crystal Growth. 52:199-206
ISSN:	0022-0248
DOI:	10.1016/0022-0248(81)90194-9
Popis:	A comprehensive view of the growth mechanisms occuring during the deposition of polycrystalline or monocrystalline thin silicon films clearly is an important step towards controlling the growth process. Experimental results concerning the growth kinetics are discussed in terms of growth theories. Monocrystalline deposition kinetics can be explained by a step flow mechanism inhibited by hydrogen adsorption whereas polycrystalline kinetics relies on atomistic nucleation theory.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::3fe7397397f23e951845f952a3e8c19c https://doi.org/10.1016/0022-0248(81)90194-9 Zobrazit plný text záznamu