| Autor: |
S. Sainson, J. Brandon, S. Slempkes, M. Feuillade, B. Mersali, M. Carre, F. Dorgeuille |
| Rok vydání: |
1996 |
| Předmět: |
|
| Zdroj: |
Electronics Letters. 32:686 |
| ISSN: |
0013-5194 |
| DOI: |
10.1049/el:19960409 |
| Popis: |
A novel integration design is demonstrated for a 2/spl times/2 switching matrix based on laser amplifier gates. For the first time, low loss single-heterostructure waveguides are integrated with double-buried-heterostructure tapered laser amplifiers. This new integration scheme provides a very simple fabrication process with only two epitaxial growth steps. At the on-state (160 mA injected gating current), devices exhibit over 10 dB net chip gain for both input polarisations and all switching matrix paths. Switching operation with gain is achieved. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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