Characterization of a Ru-based ternary-oxide thin film for a diffusion barrier

Autor:	Y. B. Kang, Soo-Hyun Kim, Ho-Soon Yang, Euh Duck Jeong, Tae Eun Hong, Mi Rang Byeon
Rok vydání:	2012
Předmět:	Secondary ion mass spectrometry Atomic layer deposition chemistry.chemical_compound Materials science Diffusion barrier X-ray photoelectron spectroscopy chemistry Analytical chemistry Oxide General Physics and Astronomy Thin film Ternary operation Rutherford backscattering spectrometry
Zdroj:	Journal of the Korean Physical Society. 61:984-987
ISSN:	1976-8524 0374-4884
Popis:	Ruthenium-based ternary-oxide thin films were grown by using thermal atomic layer deposition. The films were grown by repeating super-cycles consisting of Ru and Al2O3 sub-cycles. X-ray diffraction showed that Ru ternary-oxide thin film had a nano crystalline structure. The chemical state in the oxide thin film was clearly investigated by using X-ray photoelectron spectroscopy, and the composition of the Ru based ternary oxide film was characterized by using secondary ion mass spectrometry (SIMS). The quantitative analysis of the thin oxide films by using SIMS was calibrated by using Rutherford backscattering spectrometry. Based on the results, effects of aluminum and oxygen incorporation into Ru are discussed.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::3fc7bb3df5f7b440a7566f68a3ac6c96 https://doi.org/10.3938/jkps.61.984 Zobrazit plný text záznamu Full text from SpringerLink