Characteristics of Ga-doped ZnO thin-film ultraviolet photodetectors fabricated on patterned Si substrate

Autor:	Z L Huang, Wenqing Zhu, X T Ge, Shijie Xu, Runqiu Huang, Qian Sun, Huihui Yang, Jiqiang Ning, C Y Wu, Rongxin Wang, Q Peng
Rok vydání:	2019
Předmět:	Materials science business.industry Doping Photodetector Condensed Matter Physics medicine.disease_cause Electronic Optical and Magnetic Materials Oxide semiconductor Si substrate Materials Chemistry medicine Optoelectronics Electrical and Electronic Engineering Thin film business Ultraviolet
Zdroj:	Semiconductor Science and Technology. 35:015007
ISSN:	1361-6641 0268-1242
DOI:	10.1088/1361-6641/ab5159
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::3fc3d7e6e84f642dee3f43cd675624df https://doi.org/10.1088/1361-6641/ab5159 Zobrazit plný text záznamu