| Autor: |
Jong Kwan Woo, Chang Young Kim, Kwang Man Lee, R. Navamathavan, Heang Seuk Lee, Chi Kyu Choi |
| Rok vydání: |
2010 |
| Předmět: |
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| Zdroj: |
Journal of the Korean Physical Society. 56:1478-1483 |
| ISSN: |
0374-4884 |
| DOI: |
10.3938/jkps.56.1478 |
| Popis: |
The interconnection of copper (Cu) with low-dielectric-constant interlayer films (low-k) is crucial to improving integrated circuit performance. Integration challenges with new ultra-low-k generation materials include electrical-property and reliability issues. In this study, low-dielectric-constant SiOC(-H) films were deposited on p-type Si(100) substrates by using plasma-enhanced chemical vapor deposition (PECVD) with dimethyldimethoxysilane (DMDMOS) and oxygen gas as precursors. The deposited SiOC(-H) films were then annealed at temperatures from 250 to 450 C in a vacuum. The electrical conduction in the low-dielectric-constant SiOC(-H) films depended on two main conduction mechanisms: Schottky emission (SE) and Poole-Frenkel (PF) emission. We calculated the Schottky barrier height at the interface between the Cu and the SiOC(-H) film for SE conduction and the trap potential well in the SiOC(-H) films for PF conduction. These calculations showed that the leakage current densities were linearly related to the square root of the applied electric field. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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