Stress analysis of Si1−xGex embedded source/drain junctions
| Autor: | R. Wise, Shawn G. Thomas, Roger Loo, Andriy Hikavyy, Eddy Simoen, C. Claeys, J.P. Lu, Vladimir Machkaoutsan, Nobuyuki Naka, M. Bargallo Gonzalez, Peter Verheyen, Y. Okuno, Geert Eneman, Pierre Tomasini |
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| Rok vydání: | 2008 |
| Předmět: |
Materials science
Condensed matter physics Mechanical Engineering chemistry.chemical_element Germanium Condensed Matter Physics Stress (mechanics) Stress field symbols.namesake Strain engineering chemistry Mechanics of Materials MOSFET Stress relaxation symbols Relaxation (physics) General Materials Science Raman spectroscopy |
| Zdroj: | Materials Science in Semiconductor Processing. 11:285-290 |
| ISSN: | 1369-8001 |
| Popis: | The purpose of this paper is to evaluate the impact of the geometry of embedded Si 1− x Ge x source/drain junctions on the stress field. Stress simulations were performed using TSUPREM4 2D software to further investigate the elastic strain relaxation as a function of Si 1− x Ge x alloy active size, in the regime where no plastic relaxation is present. Moreover, the role of the epilayer thickness and the Ge content on the stress levels is also discussed. The work is complemented with experimental Raman spectroscopy. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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