Neutron-activation analysis of the impurity composition of gallium arsenide based semiconductor structures
| Autor: | L. A. Smakhtin, V. A. Komar, S. V. Shiryaev, A. G. Dutov |
|---|---|
| Rok vydání: | 1997 |
| Předmět: |
Materials science
business.industry Analytical chemistry chemistry.chemical_element Condensed Matter Physics Isotropic etching Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Highly sensitive Gallium arsenide chemistry.chemical_compound Crystallography Semiconductor chemistry Impurity Composition (visual arts) Gallium Neutron activation analysis business |
| Zdroj: | Semiconductors. 31:415-417 |
| ISSN: | 1090-6479 1063-7826 |
| DOI: | 10.1134/1.1187174 |
| Popis: | The impurity composition of gallium arsenide slabs has been investigated using the highly sensitive method of neutron-activation analysis. The content of Se, Cr, Ag, Fe, Zn, Co, and Sb in the slabs as well as variations of the content of these impurities for different batches of slabs were determined. It is shown that neutron-activation analysis can be used, together with layerwise chemical etching, to study the volume distribution of impurity elements in gallium-arsenide-based semiconductor structures. |
| Databáze: | OpenAIRE |
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