Terahertz generation in InAs epitaxial films

Autor: null Chernov M. Yu., null Mustafin I. A., null Solov'ev V. A., null Trukhin V. N.
Rok vydání: 2022
Zdroj: Technical Physics Letters. 48:44
ISSN: 1726-7471
DOI: 10.21883/tpl.2022.02.52846.19051
Popis: We present the results of terahertz generation studies under excitation via femtosecond lasers pulses epitaxial films of InAs, which were synthesized on semi-insulating and highly doped GaAs substrates. It is shown that a terahertz emitter based on epitaxial InAs film grown on a heavily doped GaAs n-type substrate, has the same terahertz generation efficiency as the InAs-film emitter grown on a semi-isolating GaAs substrate, but it has a significantly better spectral resolution, which is mainly determined by the parameters of the optical delay line and the femtosecond laser's stability. Keywords: coherent terahertz emitter, InAs epitaxial film, molecular beam epitaxy
Databáze: OpenAIRE