| Autor: |
Soo-bong Chang, Young-Soo Sohn, Hyuck-Joon Kwon, Duk-ha Park, Hyong-Ryol Hwang, Junghwan Park, Kwang-II Park, Choi Yeon-Kyu, Young Hoon Son, Hyunyoon Cho, Byongwook Na, Hyung-Joon Chi, Lim Suk-Hyun, Jin-Hun Jang, Tae-Young Oh, Seung-Jun Shin, Seouk-Kyu Choi, Daesik Moon, Kim Sang-Yun, Ki-Won Park, Seong-Jin Jang, Hyo-Joo Ahn, Jung-Hwan Choi, Seungseob Lee, Chang-Kyo Lee, Dongkeon Lee, Young-Hwa Kim, Youn-sik Park, Kyung-Soo Ha, Seok-Hun Hyun |
| Rok vydání: |
2019 |
| Předmět: |
|
| Zdroj: |
ISSCC |
| DOI: |
10.1109/isscc.2019.8662509 |
| Popis: |
High-speed and low-power techniques for the latest mobile DRAMs, such as LPDDR4/4X [1–3], have been developed to enable high-resolution displays, multiple cameras and 4G communication in mobile devices. However, DRAM with higher bandwidth and lower power consumption than LPDDR4X is indispensable to support 5G communication, on-device artificial intelligence and advanced driver assistance systems. In this paper, we present a 1st generation 10nm-class process LPDDR5. It includes novel schemes that increase the maximum bandwidth, such as WCK clocking and non-target ODT (NT-ODT). Power consumption is also reduced by low power schemes, such as dynamic voltage-frequency scaling (DVFS), an internal data-copy function called write-X and a deep-sleep mode (DSM). |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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