Comparison of failure mechanisms of ESD GGNFET subjected to VFTLP robustness and reliability tests

Autor: S. Y. Chow, C. K. Koh, Weng Hong Lai, Y. Chen, B. S. Khoo
Rok vydání: 2012
Předmět:
Zdroj: 2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits.
DOI: 10.1109/ipfa.2012.6306320
Popis: An ESD GGNFET was swept with increasing voltage to failure using VFTLP. Another sample was stressed to 65% of the Vt2 obtained in the first test. The second sample failed after a large enough number of sweeps. The difference in the failure mechanisms for these two samples is reported for the first time.
Databáze: OpenAIRE