Field Effect Conductance Measurements on Thin Crystals of Sexithiophene

Autor:	C. Daniel Frisbie, Eric L. Granstrom
Rok vydání:	1999
Předmět:	Electron mobility Materials science business.industry Analytical chemistry Conductance Field effect Substrate (electronics) Surfaces Coatings and Films Organic semiconductor Electric field Monolayer Materials Chemistry Perpendicular Optoelectronics Physical and Theoretical Chemistry business
Zdroj:	The Journal of Physical Chemistry B. 103:8842-8849
ISSN:	1520-5207 1520-6106
Popis:	Field effect conductance measurements were made on individual microscopic crystals of the organic semiconductor sexithiophene (6T). These crystals, ranging from 1 to 6 molecules (2−14 nm) in thickness and from 1 to 2 μm in diameter, were deposited by thermal evaporation onto SiO2 substrates previously patterned with closely spaced (∼400 nm) pairs of Au wires. Atomic force microscopy (AFM) of these substrates demonstrated the growth of individual 6T crystals between the wires. The resulting wire/6T/wire structures were used in a transistor configuration to probe the in-plane conductance of the crystals as a function of transverse electric field (i.e., perpendicular to the substrate). These measurements showed (1) no discernible dependence of the carrier mobility on thicknesseven down to crystals as thin as a monolayersuggesting that much of the current is carried by the first monolayer next to the SiO2, (2) activated transport (EA = 25 meV) at temperatures above 100 K but nearly temperature-independent tra...
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::3f746ce09a310d2f37393691030645e2 https://doi.org/10.1021/jp991460l Zobrazit plný text záznamu