Modeling thermal stress effects in silicon web growth

Autor: Richard H. Hopkins, R.G. Seidensticker, J. Schruben
Rok vydání: 1983
Předmět:
Zdroj: Journal of Crystal Growth. 65:307-313
ISSN: 0022-0248
DOI: 10.1016/0022-0248(83)90065-9
Popis: If stresses generated by the temperature profile in a growing ribbon crystal exceed critical values, they may cause plastic deformation or buckling which limit ribbon width and, therefore, the throughput rate of the growth process. We outline here a methodology for computing the widths and thickness of silicon web ribbons which define the transition from flat to buckled growth under a given set of thermal conditions. The approach employs the iterative application of three models (web thermal profile, thermally generated stress and buckling calculations) and has considerably reduced the experimental time required to evolve low stress growth configurations. Flat web crystals up to 5.5 cm wide have been grown.
Databáze: OpenAIRE