Nitrogen-Related Complexes in Ga(AsN) and Their Interaction with Hydrogen

Autor:	A. Frova, F. Ranalli, Alfred Forchel, M. Reinhardt, Michael Fischer, V. Gaspari, Mario Capizzi, M. Bissiri, G. Baldassarri Höger von Högersthal, Antonio Polimeni
Rok vydání:	2002
Předmět:	Passivation Hydrogen Bond strength Exciton Inorganic chemistry chemistry.chemical_element Condensed Matter Physics Nitrogen Bond-dissociation energy Dissociation (chemistry) Electronic Optical and Magnetic Materials Condensed Matter::Materials Science Crystallography chemistry Irradiation
Zdroj:	physica status solidi (a). 190:651-654
ISSN:	1521-396X 0031-8965
DOI:	10.1002/1521-396x(200204)190:3<651::aid-pssa651>3.0.co;2-n
Popis:	The effects of H irradiation on the optical properties of GaAs 1-y N y epilayers in the dilute N limit have been studied. H irradiation leads to a progressive and finally complete passivation of bound exciton levels related to N complexes. A further thermal annealing restores the optical properties that the samples had before hydrogenation. These results are accounted for by the formation of N-H complexes with different bond strengths and dissociation energies.
Databáze:	OpenAIRE
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