Synthesis of $\mathbf{MoS}_{\mathbf{2}(\mathbf{1}-\mathbf{x})}\mathbf{Te}_{\mathbf{2x}}$ by Sputtering and the Change in the Physical Properties and Structure Depending on the Chalcogen Composition
| Autor: | Naomi Sawamoto, Yusuke Hashimoto, Yusuke Hibino, Kota Yamazaki, Yuya Oyanagi, Atsushi Ogura, Hitoshi Wakabayashi |
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| Rok vydání: | 2020 |
| Předmět: |
Materials science
Band gap Order (ring theory) 02 engineering and technology Substrate (electronics) Sputter deposition 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences 0104 chemical sciences Crystallography Chalcogen Transition metal Sputtering Phase (matter) 0210 nano-technology |
| Zdroj: | 2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM). |
| Popis: | The research on 2D layered transition metal dichalcogenides (TMDs) is a topic of rapidly growing field owing to its attractive physical properties and variety in applications. In order to expand the application possibility, alloying is carried out resulting in tunability of the bandgap and the band alignment. In this study, $\mathbf{MoS}_{\mathbf{2}(\mathbf{1}-\mathbf{x})}\mathbf{Te}_{\mathbf{2x}}$ , alloy of MoS 2 and MoTe 2 , is fabricated by simultaneous sputtering of Mos 2 and MoTe 2 . The physical properties and the structure change depending on the sputtering conditions are examined. It was revealed that in order to obtain layer structure and prevent phase separation, patches of Mos 2 ,MoTe 2 and $\mathbf{MoS}_{\mathbf{2}(\mathbf{1}-\mathbf{x})}\mathbf{Te}_{\mathbf{2x}}$ forming rather than having a uniformly mixed film, the control of substrate temperature and the amount of chalcogen deficit is critical. That is, when the film shows chalcogen ratio close to that of stoichiometric ratio, the film can be formed with the layer structure and without phase segregation even at relatively high substrate temperature. (Abstract) |
| Databáze: | OpenAIRE |
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