Effects of annealing temperature on optical properties of ZnO nanocrystals embedded in SiO2matrix thin films
| Autor: | Bingsen Zhang, Jin Wang, Z Z Zhi, X M Yu, Huazhe Yang, Y Qi |
|---|---|
| Rok vydání: | 2007 |
| Předmět: |
Photoluminescence
Materials science Acoustics and Ultrasonics Annealing (metallurgy) Analytical chemistry Condensed Matter Physics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Crystallinity symbols.namesake Nanocrystal Plasma-enhanced chemical vapor deposition symbols Thin film Raman spectroscopy Single crystal |
| Zdroj: | Journal of Physics D: Applied Physics. 40:4281-4284 |
| ISSN: | 1361-6463 0022-3727 |
| DOI: | 10.1088/0022-3727/40/14/027 |
| Popis: | ZnO nanocrystals embedded in SiO2 matrix thin films were fabricated on Si (1 0 0) single crystal substrates by plasma enhanced chemical vapour deposition (PECVD) at 230 °C. Subsequently, the as-deposited samples were annealed at different temperatures ranging from 500 °C to 900 °C, respectively. The effects of annealing temperature on optical properties of the thin films were investigated by Raman spectra and photoluminescence spectra. The results indicate that the annealing process can promote crystallinity and optical properties of the thin films, and that the optimized annealing temperature is 800 °C. They also suggest that the UV band originates from free exciton recombination, and the wide emission bands located from 2.71 to 2.91 eV are originated from localized trapping levels relating to the interface between ZnO and SiO2. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|