Coupled BAW/SAW Resonators Using AlN/Mo/Si and AlN/Mo/GaN Layered Structures
| Autor: | Mina Rais-Zadeh, Afzaal Qamar |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science Silicon business.industry Surface acoustic wave chemistry.chemical_element Gallium nitride Substrate (electronics) 01 natural sciences Piezoelectricity Electronic Optical and Magnetic Materials Resonator chemistry.chemical_compound chemistry Stack (abstract data type) 0103 physical sciences Optoelectronics Electrical and Electronic Engineering Thin film business |
| Zdroj: | IEEE Electron Device Letters. 40:321-324 |
| ISSN: | 1558-0563 0741-3106 |
| DOI: | 10.1109/led.2018.2890755 |
| Popis: | We demonstrate coupled bulk and surface acoustic wave (BAW/SAW) resonators with significantly improved coupling efficiency as compared to SAW only devices. Two sets of stacks are investigated: one uses a thin film piezoelectric material with a bottom electrode on GaN substrate (i.e., AlN/Mo/GaN) and another includes a piezoelectric thin film with bottom metal on a Si substrate (i.e., AlN/Mo/Si). A vibrating BAW transducer induces a SAW in the substrate and between two sets of interdigitated transducers improving the coupling efficiency by a factor of ${\geq }\, \mathsf {8}{x}$ as compared to the conventional SAW. The performance of the coupled BAW/SAW resonators using each of the Si and GaN substrates is compared using FEM analysis. By using FEM, coupling efficiency of the hybrid BAW/SAW with AlN/Mo/Si stack is 2.4%, whereas it is 3.2% for the SAW using AlN/Mo/GaN stack. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|