Spin Transfer Torque driven dynamics of the synthetic antiferromagnetic reference layer of perpendicular MRAM devices

Autor:	Huanlong Liu, Ru-Ying Tong, Sundar Vignesh, Terry Torng, Vinh Lam, Jesmin Haq, Shen Dongna, Mohammed Benzaouia, Jodi Iwata-Harms, P. Liu, Renren He, A. Wang, Y. Yang, Po-Kang Wang, Guenole Jan, Y. Lee, Jian Zhu, T. Zhong, J. Teng, Luc Thomas, Son Thai Le, Sahil Patel, Santiago Serrano-Guisan
Rok vydání:	2017
Předmět:	Magnetoresistive random-access memory Materials science Condensed matter physics Spin-transfer torque Magnetic separation Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter::Materials Science Computer Science::Hardware Architecture Magnetization Tunnel magnetoresistance Ferromagnetism Condensed Matter::Superconductivity Perpendicular Antiferromagnetism Condensed Matter::Strongly Correlated Electrons
Zdroj:	2017 IEEE International Magnetics Conference (INTERMAG).
DOI:	10.1109/intmag.2017.8007621
Popis:	Spin Transfer Torque Magnetic Random Access Memories (STT-MRAM) are based on Magnetic Tunnel Junctions (MTJs) made out of two ferromagnetic electrodes separated by a MgO tunnel barrier.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::3f1c8d8e6c6918caee1a908bd917d0e8 https://doi.org/10.1109/intmag.2017.8007621 Zobrazit plný text záznamu