An Investigation of Single-Event Effects and Potential SEU Mitigation Strategies in Fourth-Generation, 90 nm SiGe BiCMOS
| Autor: | Nelson E. Lourenco, Zachary E. Fleetwood, S.D. Phillips, Stephen P. Buchner, Dale McMorrow, Marek Turowski, Ashok Raman, Troy D. England, Kurt A. Moen, Pauline Paki-Amouzou, Jeffrey H. Warner, John D. Cressler, David L. Harame, Adilson S. Cardoso, Jack Pekarik |
|---|---|
| Rok vydání: | 2013 |
| Předmět: |
Nuclear and High Energy Physics
Materials science business.industry Heterojunction bipolar transistor BiCMOS Reduction (complexity) Nuclear Energy and Engineering Electronic engineering Optoelectronics Transient (oscillation) Electrical and Electronic Engineering business Absorption (electromagnetic radiation) Sensitivity (electronics) Common emitter Shift register |
| Zdroj: | IEEE Transactions on Nuclear Science. 60:4175-4183 |
| ISSN: | 1558-1578 0018-9499 |
| Popis: | The single-event effect sensitivity of fourth-generation, 90 nm SiGe HBTs is investigated. Inverse-mode, ≥1.0 Gbps SiGe digital logic using standard, unoptimized, fourth-generation SiGe HBTs is demonstrated and the inverse-mode shift register exhibited a reduction in bit-error cross section across all ion-strike LETs. Ion-strike simulations on dc calibrated, 3-D TCAD SiGe HBT models show a reduction in peak current transient magnitude and a reduction in overall transient duration for bulk SiGe HBTs operating in inverse mode. These improvements in device-level SETs are attributed to the electrical isolation of the physical emitter from the subcollector-substrate junction and the high doping in the SiGe HBT base and emitter, suggesting that SiGe BiCMOS technology scaling will drive further improvements in inverse-mode device and circuit-level SEE. Two-photon absorption experiments at NRL support the transient mechanisms described in the device-level TCAD simulations. Fully-coupled mixed-mode simulations predict large improvements in circuit-level SEU for inverse-mode SiGe HBTs in multi-Gbps, inverse-mode digital logic. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|