Fabrication of zinc stannate based all-printed resistive switching device
| Autor: | Junaid Ali, Kyung Hyun Choi, Ghayas-ud-din Siddiqui, Yang Hoi Doh |
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| Rok vydání: | 2016 |
| Předmět: |
Materials science
Fabrication business.industry Mechanical Engineering 02 engineering and technology Memristor Substrate (electronics) 010402 general chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences 0104 chemical sciences Active layer law.invention Field emission microscopy Hysteresis Mechanics of Materials law Electrode Optoelectronics General Materials Science Thin film 0210 nano-technology business |
| Zdroj: | Materials Letters. 166:311-316 |
| ISSN: | 0167-577X |
| DOI: | 10.1016/j.matlet.2015.12.045 |
| Popis: | This paper describes resistive switching in ZnSnO 3 thin film deposited by electrohydrodynamic atomization. The field emission scanning electron microscope analysis showed uniform surface morphology for thin films. The active layer, a thin film comprised of ZnSnO 3 nano-cubes was printed between screen printed silver (Ag) electrodes on glass substrate. Resistive switching behavior of the Ag/active layer/Ag sandwich structure was confirmed by current voltage analyses. The 3×3 array of memristors thus fabricated, showed characteristic OFF to ON (high resistance to low resistance) transition at low voltages, when operated between ±2 V, at 100 nA compliance currents. The memristor array exhibited stable room temperature current–voltage hysteresis, low power operation, retentivity in excess of 24 h. An R OFF / R ON ≈10:1 was observed at V Read =100 mV for more than 100 voltage stress cycles. All memory bits showed similar current voltage characteristics with respect to resistive switching parameters. |
| Databáze: | OpenAIRE |
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