Few-layer In4/3P2Se6 nanoflakes for high detectivity photodetectors
| Autor: | Yong Yan, Xueping Li, Yurong Jiang, Zinan Ma, Jingbo Li, Hongxiao Zhao, Tian Tian, Congxin Xia, Xiaohui Song |
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| Rok vydání: | 2021 |
| Předmět: | |
| Zdroj: | Nanoscale. 13:3757-3766 |
| ISSN: | 2040-3372 2040-3364 |
| DOI: | 10.1039/d0nr07987a |
| Popis: | Metal phosphorus trichalcogenides (MPX3) have attracted extensive attention as promising two-dimensional (2D) layered materials in future electronic and optoelectronic devices. Here, for the first time, few-layer In4/3P2Se6 nanoflakes have been successfully exfoliated from home-made high-quality single crystals. The In4/3P2Se6 crystal belongs to the R3 space group, and possesses a weak van der Waals force between the adjacent layers and a direct bandgap of 1.99 eV. Furthermore, the In4/3P2Se6-based photodetectors show high performances in the visible light region, such as a high responsivity (R) of 4.93 A·W-1, a high external quantum efficiency (EQE) of 1509% and a fast response time, as low as 2.1 ms. In particular, the high detectivity (D) of the devices can reach up to 4.3 × 1013 Jones (light ON/OFF ratio ≈104) under illumination from a 405 nm light at a bias voltage of 1 V, which is favoured by the ultralow dark current (∼100 fA). These excellent performances pave the way for the implementation of In4/3P2Se6 nanoflakes as promising candidates for future optoelectronic detection applications. |
| Databáze: | OpenAIRE |
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