An experimental observation of photo-induced carrier multiplication in hydrogenated amorphous silicon
| Autor: | Yoshiyuki Osada, Shigetoshi Sugawa, Kazuaki Ohmi, Masato Yamanobe |
|---|---|
| Rok vydání: | 1991 |
| Předmět: |
Amorphous silicon
Range (particle radiation) Materials science Silicon business.industry Schottky barrier chemistry.chemical_element General Chemistry Photon energy Condensed Matter Physics Multiple exciton generation chemistry.chemical_compound Optics chemistry Ionization Materials Chemistry Optoelectronics Quantum efficiency business |
| Zdroj: | Solid State Communications. 80:373-376 |
| ISSN: | 0038-1098 |
| DOI: | 10.1016/0038-1098(91)90709-5 |
| Popis: | A photo-induced carrier multiplication in a hydrogenated amorphous silicon has been observed. A careful measurement of photo-carrier generation has been done with amorphous silicon Schottky barrier structure junctions as a function of incident photon energy in the range between 1.55eV and 6.2eV. The quantum efficiency is estimated to be multiplied by a factor of two in higher photon energy region than 5.4eV. This multiplication can be explained by an interband carrier ionization due to the energy given by a high energy photo-carrier. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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