| Popis: |
The basic requirements for RF/microwave power transistors are set forth. The salient features and applications of the solid-state triode (SST) are described and experimental results are presented. Typical broadband RF impedance characteristics are given; the device equivalent circuit, power gain test circuit, and device die layout are shown; and the RF transfer characteristics for a 50 W SST are presented. It is concluded that, as the SST exhibits technical features superior to presently available microwave transistors, this technology will not only offer cost-efficient replacements, but will also open the door to applications so far unaccessible to semiconducting devices. > |
