Implant Profiles In GaP, GaAs, InP, And InSb: Influence Of Furnace And Rapid Thermal Annealing

Autor:	S. w. Novak, R . G. Wilson
Rok vydání:	1987
Předmět:	Secondary ion mass spectrometry chemistry.chemical_compound Chemical species Materials science Silicon chemistry Annealing (metallurgy) Analytical chemistry chemistry.chemical_element Beryllium Mass spectrometry Ion Gallium arsenide
Zdroj:	SPIE Proceedings.
ISSN:	0277-786X
DOI:	10.1117/12.941045
Popis:	Profiles measured using secondary ion mass spectrometry for random and channeled implants of column II, IV, and VI elements in GaP, GaAs, InP, and InSb are decsribed. Depths and influence of furnace and lamp annealing on these profiles are emphasized.
Databáze:	OpenAIRE
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