| Autor: |
K. Rajagopalan, Asen Asenov, Haiping Zhou, Matthias Passlack, Xu Li, Stephen Thoms, I.G. Thayne, Peter Fejes, Ravindranath Droopad, D. A. J. Moran, Hill Richard J, Douglas Macintyre |
| Rok vydání: |
2008 |
| Předmět: |
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| Zdroj: |
2008 IEEE Silicon Nanoelectronics Workshop. |
| DOI: |
10.1109/snw.2008.5418447 |
| Popis: |
There is a growing belief that strained silicon alone may not be able to deliver sufficient performance beyond the 22nm technology generation of the International Technology Roadmap for Semiconductors (ITRS), and that high mobility channel materials may be required. This view has led to the establishment of various collaborations to explore the potential of high mobility III-V semiconductors, particularly for n-MOSFET realisation, such as the SRC Non Classical CMOS Research Center in the US and the DualLogic project in Europe. This paper describes the first results from flatband-mode (FB) In0.75Ga0.25As channel nMOSFETs which have highly encouraging performance metrics. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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