Temperature dependent current transport behavior of improved low noise NiGe schottky diodes for low leakage Ge-MOSFET
| Autor: | Samaresh Das, Veerendra Dhyani, Mohd Saleem Pasha, Wasi Uddin, Sarmistha Maity |
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| Rok vydání: | 2019 |
| Předmět: |
Materials science
Schottky barrier chemistry.chemical_element Germanium 02 engineering and technology 01 natural sciences symbols.namesake Operating temperature 0103 physical sciences MOSFET Materials Chemistry Electrical and Electronic Engineering Diode 010302 applied physics business.industry Schottky diode 021001 nanoscience & nanotechnology Condensed Matter Physics Electronic Optical and Magnetic Materials chemistry symbols Optoelectronics 0210 nano-technology business Raman spectroscopy Noise (radio) |
| Zdroj: | Semiconductor Science and Technology. 34:035026 |
| ISSN: | 1361-6641 0268-1242 |
| DOI: | 10.1088/1361-6641/ab0317 |
| Popis: | In this letter, we report on improved low noise NiGe/n-Ge (100) Schottky barrier diodes (SBDs) fabricated by post annealing of sputtered Ni films on germanium substrates. The results of x-ray diffraction and Raman spectroscopy confirm the formation of NiGe phase at elevated temperatures. Electrical behaviour of the SBDs at different temperatures have been investigated and compared. Experimental results indicate the presence of barrier inhomogeneity and low temperature I–V measurements were performed and the effect of operating temperature on barrier height was studied. The Schottky barrier heights were calculated and compared using current-voltage and capacitance-voltage methods. A low frequency noise measurement on SBDs showed typical 1/f noise behaviour. Study shows that NiGe can be used as a contact material for low leakage Ge-MOSFET applications. |
| Databáze: | OpenAIRE |
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