Simulation of transient radiation upset in a 0.18-μm CMOS SRAM by accurately modeling a 6T memory cell

Autor:	Zhenguo Zhao, Guangrong Li, Xuesong Meng, Fang Yang, Xuan Zeng
Rok vydání:	2022
Předmět:	Electrical and Electronic Engineering Safety Risk Reliability and Quality Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials
Zdroj:	Microelectronics Reliability. 139:114787
ISSN:	0026-2714
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::3eceade82b7a894b1a8dbefcd8889684 https://doi.org/10.1016/j.microrel.2022.114787 Zobrazit plný text záznamu Full Text from ScienceDirect