Transient Investigation of Metal-oxide based, CMOS-compatible ECRAM
| Autor: | Douglas M. Bishop, Matthew Copel, John Rozen, Paul M. Solomon, John Collins, Teodor K. Todorov, K.-L. Lee, Simon Dawes, Damon B. Farmer |
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| Rok vydání: | 2021 |
| Předmět: |
Computer science
Field effect 02 engineering and technology Dissipation 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences 0104 chemical sciences Non-volatile memory Reliability (semiconductor) Logic gate Charge control Electronic engineering Transient (computer programming) 0210 nano-technology Voltage |
| Zdroj: | IRPS |
| DOI: | 10.1109/irps46558.2021.9405156 |
| Popis: | Metal-oxide based Electrochemical Random-Access Memory (MO-ECRAM) has shown unique potential as a nonvolatile element for analog in-memory computation of deep learning tasks. Using a specially designed interdigitated device geometry, we investigate transient effects of MO-ECRAM and correlate them with programming speed, read speed and read-after write speed. Programming speed is shown to exponentially increase with programming voltage. Read speed reached the ns range, while read-after-write delay can be limited by decay of write transients in the studied devices. Two mechanisms of channel modulation were found; a prompt field effect and a field-induced memory effect. The charge control of the prompt effect was vastly greater than that of the memory effect. So to reduce and mitigate transient impact, we discuss both device improvements, and learning algorithm engineering strategies. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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