Reliability assessment of tungsten via to copper interconnect for novel memory device

Autor:	X.C. Lee, An-Shun Teng, Thomas Wen, Ming-Yi Lee, Allen Dai, Albert Kuo, Chih-Yuan Lu, Ronnie Tu
Rok vydání:	2012
Předmět:	Materials science business.industry Copper interconnect chemistry.chemical_element Tungsten Thermal diffusivity Copper Stress (mechanics) Reliability (semiconductor) chemistry Electrical resistivity and conductivity Electronic engineering Optoelectronics business Current density
Zdroj:	2012 IEEE International Interconnect Technology Conference.
DOI:	10.1109/iitc.2012.6251650
Popis:	The reliability assessment of tungsten via to copper interconnect were investigated. Just-landing and un-landing via structure showed similar EM characteristics to full-landing structure. The activation energy of EM is about 0.86 and current density exponent is about 1.9, which means the mechanisms of interfacial diffusivity and line depletion stress. The resistance shifting of all splits was no more than 1% after 1000H SM test. The un-landing via of over-etching formation showed good resistivity and reliability that might be one of the solutions for gaining the process pitch in low-cost memory applications.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::3eaa462f11f84c79acf691efeaa76417 https://doi.org/10.1109/iitc.2012.6251650 Zobrazit plný text záznamu