Gated Diode Design to Mitigate Radiation Damage in X-Ray Imagers
| Autor: | D. Albagli, Scott Stephen Zelakiewicz, A. Couture, W. Hennessy |
|---|---|
| Rok vydání: | 2008 |
| Předmět: |
Amorphous silicon
Materials science business.industry Detector Particle detector Electronic Optical and Magnetic Materials Photodiode law.invention chemistry.chemical_compound Optics chemistry law Absorbed dose Radiation damage Optoelectronics Electrical and Electronic Engineering business Diode Leakage (electronics) |
| Zdroj: | IEEE Electron Device Letters. 29:70-72 |
| ISSN: | 1558-0563 0741-3106 |
| DOI: | 10.1109/led.2007.910788 |
| Popis: | Radiation damage of amorphous silicon X-ray imagers leads to degradation of the detector's performance due to increased diode perimeter leakage. To reduce the effect of this damage, a novel pixel device based on a gated diode was fabricated. The additional gate metalization placed on the perimeter of the diode modulates the surface side-wall leakage and has been tested up to a 64 kGy absorbed dose in the diode. This new pixel design significantly reduces the increase in diode leakage and noise due to radiation damage, providing a more uniform performance and extending the lifetime of the imager. |
| Databáze: | OpenAIRE |
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