Applying DMOSTs, diodes and thyristors above and below substrate in thin-layer SOI

Autor:	A.W. Ludikhuize, Alfred Grakist, Maarten Jacobus Swanenberg
Rok vydání:	2004
Předmět:	Materials science Application-specific integrated circuit business.industry MOSFET Electrical engineering Silicon on insulator Optoelectronics Thyristor Substrate (electronics) Swing business Voltage Diode
Zdroj:	ISPSD '03. 2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs, 2003. Proceedings..
DOI:	10.1109/ispsd.2003.1225271
Popis:	This paper reports on above- and below-substrate behavior of 120V LDMOSTs and on injecting bipolar-type devices like diodes, LIGBT's and thyristors, integrated in A-BCD thin-layer SOI technology. The full isolation as obtained in SOI allows for novel IC applications; an example is shown which generates an output swing from +110V to -110V.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::3e9e6604e9c69da923d42753187a9ee5 https://doi.org/10.1109/ispsd.2003.1225271 Zobrazit plný text záznamu