Evaluation Method For Infrared Focal Plane Arrays With Metal Insulator Semiconductor (MIS) Structure

Autor: Takigawa Hiroshi, Kunihiro Tanikawa, Reikichi Tsunoda, Toshio Kanno, Tohru Maekawa, T. Yamamoto, Yoshihiro Miyamoto
Rok vydání: 1982
Předmět:
Zdroj: SPIE Proceedings.
ISSN: 0277-786X
DOI: 10.1117/12.933717
Popis: This paper describes a new method of surface potential measurement for MIS infrared focal plane arrays. The key feature of this method is a charge sensitive amplifier which detects the surface potential directly. The surface potential is subject to photo-generated charge carriers stored in a potential well as well as the gate voltage. Therefore, this measurement can be used for both electronic and optical characterization of an MIS infrared imager such as an infrared charge coupled device (IRCCD) or an infrared charge injection device (IRCCD). Mercury cadmium telluride (HgCdTe) IRCIDs with 3 x 5 pixels were evaluated using this technique. The measurement was controlled by HP System 35 and proved more accurate, informative, and speedy than the conventional capacitance-voltage (C-V) measurement.
Databáze: OpenAIRE