Carrier Lifetime Control of 4H-SiC Epitaxial Layers by Boron Doping
| Autor: | Takeshi Tawara, Tetsuya Miyazawa, Hidekazu Tsuchida |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Photoluminescence Materials science Mechanical Engineering Doping Analytical chemistry 02 engineering and technology Carrier lifetime 021001 nanoscience & nanotechnology Condensed Matter Physics Epitaxy 01 natural sciences Mechanics of Materials 0103 physical sciences Electron beam processing General Materials Science Thermal stability Irradiation 0210 nano-technology Luminescence |
| Zdroj: | Materials Science Forum. 897:51-54 |
| ISSN: | 1662-9752 |
| DOI: | 10.4028/www.scientific.net/msf.897.51 |
| Popis: | An epitaxial growth technique for 4H-SiC with B doping was developed to control the carrier lifetimes of the epilayers. A linear relationship was observed between the B doping concentration and the flow rate of tri-ethyl-boron, which was used as the B doping source. A room temperature photoluminescence spectrum of a N-and B-doped epilayer showed a broad B-related peak at 2.37 eV instead of a band-edge luminescence, which indicates that the carrier recombination path was changed by the B doping. The minority carrier lifetime decreased (< 30 ns at 250°C) with increasing B doping concentration. The thermal stability of the short carrier lifetime was compared with a conventional carrier lifetime reduction method, namely an electron irradiation technique. After thermal annealing at 1700°C, the carrier lifetime of the electron irradiated epilayer recovered while that of the B-doped epilayer remained, indicating that the carrier lifetime controlled by the B doping technique was more stable against the thermal processes. |
| Databáze: | OpenAIRE |
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