Influence of Annealing Temperatures on Properties of Novel W-Zn-Sn-O Thin Film Transistor

Autor:	张建华 Zhang Jianhua, 徐 兵 Xu Bing, 周 畅 Zhou Chang, 李喜峰 Li Xi-feng, 杨 祥 Yang Xiang
Rok vydání:	2019
Předmět:	Radiation Materials science Annealing (metallurgy) business.industry Thin-film transistor Optoelectronics Condensed Matter Physics business Electronic Optical and Magnetic Materials
Zdroj:	Chinese Journal of Luminescence. 40:209-214
ISSN:	1000-7032
DOI:	10.3788/fgxb20194002.0209
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::3e679d63fb584e23e74cb38ab62963f5 https://doi.org/10.3788/fgxb20194002.0209 Zobrazit plný text záznamu