Giant Magnetoresistance in Magnetic Nanostructures and Spintronic Devices
| Autor: | A. S. Shulenkov, N. N. Novitskii, A. I. Stognij, L. V. Lutsev |
|---|---|
| Rok vydání: | 2010 |
| Předmět: |
Nanostructure
Materials science Magnetoresistance Spintronics Condensed matter physics Physics::Instrumentation and Detectors business.industry Physics::Optics Heterojunction Giant magnetoresistance Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Atomic and Molecular Physics and Optics Avalanche breakdown Magnetic field Condensed Matter::Materials Science Rectangular potential barrier Optoelectronics General Materials Science business |
| Zdroj: | Solid State Phenomena. :23-26 |
| ISSN: | 1662-9779 |
| DOI: | 10.4028/www.scientific.net/ssp.168-169.23 |
| Popis: | The injection magnetoresistance effect in SiO2(Co)/GaAs heterostructures, where SiO2(Co) is a granular SiO2 film containing Co nanoparticles, has been studied. This effect manifests itself in the avalanche breakdown mode and has extremely large values at room temperature due to the spin-dependent potential barrier. We consider application of the IMR effect and SiO2(Co)/GaAs heterostructures in spintronic devices – high sensitive magnetic sensors and field-effect transistors governed by applied magnetic field. |
| Databáze: | OpenAIRE |
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