Double magnetic tunnel junctions with perpendicular anisotropy
| Autor: | Léa Cuchet, B. Dieny, Ricardo C. Sousa, I. L. Prejbeanu, Stéphane Auffret |
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| Rok vydání: | 2015 |
| Předmět: |
Magnetoresistive random-access memory
Materials science Condensed matter physics Magnetoresistance Magnetometer Spin-transfer torque Magnetic separation Condensed Matter::Mesoscopic Systems and Quantum Hall Effect law.invention Computer Science::Hardware Architecture Tunnel magnetoresistance Magnetic anisotropy Planar law |
| Zdroj: | 2015 IEEE Magnetics Conference (INTERMAG). |
| DOI: | 10.1109/intmag.2015.7157061 |
| Popis: | Magnetic Tunnel Junctions (MTJs) with perpendicular anisotropy have been studied extensively in recent years since their remarkable properties (high write speed, scalability, endurance, low critical current density for Spin Transfer Torque (STT) switching, etc.) make them particularly attractive components to use in Magnetic Random Access Memories (MRAM) [1]. In the meantime, the use of a double barrier in planar junctions appeared to enhance STT efficiency [2] and reduce the bias dependence of Tunnel MagnetoResistance (TMR). |
| Databáze: | OpenAIRE |
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