Position Controlled Growth of Single Crystal Cu3Si Nanostructures
| Autor: | Curtis J. O’Kelly, John J. Boland, Soon Jung Jung |
|---|---|
| Rok vydání: | 2015 |
| Předmět: |
Materials science
Nanostructure business.industry Bilayer Diffusion Nucleation Nanotechnology 02 engineering and technology General Chemistry Substrate (electronics) 010402 general chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Surface energy 0104 chemical sciences Optoelectronics General Materials Science 0210 nano-technology business Layer (electronics) Single crystal |
| Zdroj: | Crystal Growth & Design. 15:5355-5359 |
| ISSN: | 1528-7505 1528-7483 |
| DOI: | 10.1021/acs.cgd.5b00947 |
| Popis: | In this work, we demonstrate the position controlled growth of single Cu3Si nanostructures using a Ge–Cu bilayer film that contains a pattern of defects on a Si substrate with a thin oxide layer. The defects act as nucleation centers for growth, while the presence of Ge within the bilayer is critical to ensure effective surface diffusion rates and to eliminate spurious nucleation and growth. The behavior presented is consistent with a surface energy driven growth mechanism. The defect mediated reaction between Cu and the underlying Si substrate insures that the grown nanostructures are in perfect registry with the substrate. The possible applications and alternative implementations of this technology are discussed. |
| Databáze: | OpenAIRE |
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