Modeling of SiC power modules with double sided cooling
| Autor: | Alexander Mann, Olaf Zschieschang, Eberhard Kaulfersch, Dag Andersson, Klaus Neumaier, Michael Edwards, Klas Brinkfeldt, Alexander Otto |
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| Rok vydání: | 2014 |
| Předmět: |
Materials science
Silicon business.industry Bipolar junction transistor Transistor Electrical engineering chemistry.chemical_element Hardware_PERFORMANCEANDRELIABILITY law.invention chemistry.chemical_compound Thermal conductivity chemistry law Power module Hardware_INTEGRATEDCIRCUITS Silicon carbide Optoelectronics business Current density Diode |
| Zdroj: | 2014 15th International Conference on Thermal, Mechanical and Mulit-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE). |
| Popis: | Silicon Carbide (SiC) based transistor devices have demonstrated higher efficiency switching operation compared to silicon-based, state-of-the-art solutions due to the superior electrical and thermal properties of the SiC material. The improved current density and thermal conductivity allows SiC-based power modules to be smaller than their silicon counterparts for comparable current densities. The active chip area can be reduced further by effectively cooling the devices. In this work, a new power module including SiC bipolar junction transistors (BJT) and diodes and integrated double sided cooling will be introduced. The target application of these modules is a new drive-train system for commercial electric vehicles. |
| Databáze: | OpenAIRE |
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