Damage accumulation during cryogenic and room temperature implantations in strained SiGe alloys
| Autor: | Jean-Charles Barbe, Caroline Curfs, Sofiane Guissi, Perrine Batude, Benjamin Colombeau, B. Mathieu, Clement Tavernier, Sylvain Joblot, Ignacio Martin-Bragado, Benoit Sklenard, Flavia Piegas Luce, Anthony Payet, Patrice Gergaud |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science business.industry Mechanical Engineering chemistry.chemical_element Germanium 02 engineering and technology Binary collision approximation 021001 nanoscience & nanotechnology Condensed Matter Physics Epitaxy 01 natural sciences Combined approach Amorphous solid Silicon-germanium chemistry.chemical_compound chemistry Mechanics of Materials 0103 physical sciences Calibration Optoelectronics General Materials Science Kinetic Monte Carlo 0210 nano-technology business |
| Zdroj: | Materials Science in Semiconductor Processing. 42:247-250 |
| ISSN: | 1369-8001 |
| Popis: | The amorphization by implantation of strained silicon–germanium epitaxial layers is investigated by experiments and simulation according to the germanium content in the film and the implantation conditions. Experimental results are used to calibrate a numerical model based on a combined approach between a Binary Collision Approximation (BCA) module and a kinetic Monte Carlo (kMC) module. The calibration is implemented in the Synopsys Sentaurus Process simulator and a close agreement between simulations and experiments is shown. Experimental results show that by increasing the germanium concentration, amorphous thickness is reduced for high energy implantations. Germanium content seems to have less impact at low energy implantations. |
| Databáze: | OpenAIRE |
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