Magneto-optical studies of shallow donors in MOCVD grown GaN layers in FIR

Autor:	Jacek M. Baranowski, A. M. Witowski, B. Suchanek, Gerard Martinez, K. Pakua, Roman Stepniewski, P. Wyder, Marek Potemski, M. L. Sadowski
Rok vydání:	1998
Předmět:	Materials science business.industry Cyclotron Electron Epitaxy law.invention Semiconductor Effective mass (solid-state physics) Far infrared law Optoelectronics General Materials Science Metalorganic vapour phase epitaxy Ionization energy business
Zdroj:	MRS Internet Journal of Nitride Semiconductor Research. 3
ISSN:	1092-5783
DOI:	10.1557/s1092578300001058
Popis:	Far infrared magnetooptical investigations of shallow donors in epitaxial MOCVD GaN layers show two types of shallow donors. In relaxed layers, a donor with an ionization energy of 35 meV was found. In strained, undoped and Si doped samples, a donor with ionization energy 32.5 meV was observed. From the p state splitting in magnetic field, the cyclotron effective mass for conduction electrons was found to be m*=0.222 m0.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::3e261067a578050a9607d1423b7b1043 https://doi.org/10.1557/s1092578300001058 Zobrazit plný text záznamu Full text from SpringerLink