Low temperature thermoelectric properties of p-type copper selenide with Ni, Te and Zn dopants
| Autor: | Cyril Opeil, Zhensong Ren, Xiang Chen, Mengliang Yao, Zhifeng Ren, Weishu Liu, Stephen D. Wilson |
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| Rok vydání: | 2017 |
| Předmět: |
Materials science
Mechanical Engineering Metals and Alloys Analytical chemistry chemistry.chemical_element 02 engineering and technology Atmospheric temperature range 010402 general chemistry 021001 nanoscience & nanotechnology Hot pressing Thermoelectric materials 01 natural sciences 0104 chemical sciences Bismuth chemistry Mechanics of Materials Electrical resistivity and conductivity Thermoelectric effect Materials Chemistry Figure of merit 0210 nano-technology Charge density wave |
| Zdroj: | Journal of Alloys and Compounds. 699:718-721 |
| ISSN: | 0925-8388 |
| DOI: | 10.1016/j.jallcom.2016.12.400 |
| Popis: | Thermoelectric figure of merit (ZT) of 0.14 at 200 K is achieved in p-type α-phase copper selenide (Cu2Se) parent compound made by a ball milling and hot pressing process which exhibits layered structure material. This figure of merit is higher than the conventional p-type TE material bismuth antimony at this temperature range. The broad maxima in the electrical resistivity data around 100 K indicates a possible charge density wave (CDW) transition and Peierls distortion, however, such kind of anomalies were not observed in other transport properties. These features suggest that p-type α-Cu2Se could be a promising thermoelectric material at low temperatures. |
| Databáze: | OpenAIRE |
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