Dislocation-related luminescence in single-crystal silicon subjected to silicon ion implantation and subsequent annealing
| Autor: | D. I. Tetel’baum, I. T. Serenkov, V. I. Sakharov, Elena I. Shek, Nikolai A. Sobolev, A. M. Emel’yanov |
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| Rok vydání: | 2007 |
| Předmět: |
Materials science
Silicon Annealing (metallurgy) Analytical chemistry chemistry.chemical_element Condensed Matter Physics Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Amorphous solid Ion Crystallography Wavelength Ion implantation chemistry Single crystal silicon Luminescence |
| Zdroj: | Semiconductors. 41:537-539 |
| ISSN: | 1090-6479 1063-7826 |
| DOI: | 10.1134/s1063782607050107 |
| Popis: | Implantation of silicon ions with an energy of 100 keV at a dose of 1 × 1017 cm−2 into n-type floatzone Si does not lead to the formation of an amorphous layer. Subsequent annealing in a chlorine-containing atmosphere at 1100°C gives rise to dislocation-related luminescence. The intensity of the dominant D1 line peaked at a wavelength of ∼1.54 μm grows as the annealing time is increased from 15 to 60 min. |
| Databáze: | OpenAIRE |
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