High Performance InGaAs PIN Photodetector

Autor:	Shoou-Jinn Chang, Yung-Sheng Wang, Wei Lin, Yu-Zung Chiou
Rok vydání:	2007
Předmět:	Materials science business.industry Photodetector Chemical vapor deposition Capacitance Temperature measurement Gallium arsenide chemistry.chemical_compound Optics chemistry Optoelectronics Metalorganic vapour phase epitaxy business Indium gallium arsenide Dark current
Zdroj:	2007 Asia-Pacific Microwave Conference.
DOI:	10.1109/apmc.2007.4554524
Popis:	In this paper, high quality InGaAs PIN photodetector prepared on S-doped InP substrate by metal organic chemical vapor deposition (MOCVD) are investigated. With a absorption layer of 2.8 mum and a photosensitive diameter window of 60 mum at reverse bias of 5V, dark current of 105 pA, capacitance of 0.475 pF, and the optical responsivities of 0.76 AAV and 1.17A/W, and the detectivities (D*) of 3.69>
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::3e1746960643e2fedd31aa714ad48ec8 https://doi.org/10.1109/apmc.2007.4554524 Zobrazit plný text záznamu