Synthesis of Silicon Carbide Films from Partially Oxidized Polyvinylsilane by Carbon Tetrachloride Solution Casting
| Autor: | Takeshi Hasegawa, Tom Apple, Kevin Moraes, Masayoshi Itoh, Leonard V. Interrante, Masaki Narisawa, Kiyohito Okamura |
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| Rok vydání: | 2002 |
| Předmět: |
Materials science
Mechanical Engineering Radical polymerization Condensed Matter Physics Casting Amorphous solid chemistry.chemical_compound Carbon film chemistry Chemical engineering Mechanics of Materials Silicon carbide Organic chemistry General Materials Science Vinylsilane Layer (electronics) Pyrolysis |
| Zdroj: | Journal of Materials Research. 17:214-223 |
| ISSN: | 2044-5326 0884-2914 |
| Popis: | Polyvinylsilane (PVS), derived from vinylsilane by radical polymerization, was partially oxidized in hot carbon tetrachloride solution by flowing air. If the air flow time is adjusted, soft gel films can be formed in a Teflon dish by casting the PVS solution. After the PVS films were peeled from the substrates, they were pyrolyzed at various temperatures. Spectroscopic studies of the pyrolyzed films up to 1273 K suggested that carbosilane (Si–CH2–Si) structures are formed in the films at 473–673 K. The compositions of the amorphous films obtained at 1673 K were approximately SiC1.38O0.21 and SiC1.41O0.51, depending on the crosslinking conditions. The oxygen incorporated in the films was removed in the form of CO and SiO during further heating at 1673–1873 K. The compositions of the films were changed to approximately SiC1.25 and SiC1.26, respectively, at 2073 K. The films obtained at 1273 K did not show degradation during the oxidation at 1273–1673 K while a protective silica layer was formed on their surfaces. |
| Databáze: | OpenAIRE |
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