Ways towards the scaleable integration of carbon nanotubes into silicon based technology
| Autor: | Robert Seidel, Eugen Unger, Maik Liebau, Andrew Graham, Franz Kreupl, Wolfgang Hoenlein, Georg S. Duesberg |
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| Rok vydání: | 2004 |
| Předmět: |
Materials science
Silicon business.industry Mechanical Engineering Transistor chemistry.chemical_element Nanotechnology General Chemistry Carbon nanotube Structuring Electronic Optical and Magnetic Materials law.invention chemistry law Materials Chemistry Microelectronics Wafer Electronics Electrical and Electronic Engineering business Lithography |
| Zdroj: | Diamond and Related Materials. 13:354-361 |
| ISSN: | 0925-9635 |
| Popis: | The outstanding performance of carbon nanotubes (CNTs) as interconnects and microelectronic devices has been shown in a number of experiments on hand-picked demonstrators. However, for implementation parallel manufacture, which involves the precise placement and the simultaneous control over the properties of millions of CNTs with microelectronic compatible processes is required. Various concepts for the large-scale integration of CNT-based electronics are compared in this presentation. One of them, catalyst mediated CVD growth, allows the direct growth of CNTs on silicon substrates. Methods for structuring the substrates and the catalyst materials on wafer scale as well as the influence of the process parameters are discussed in terms of reproducibility and uniformity. Furthermore, the synthesis of single, isolated multiwalled CNTs with lithographically defined diameters and locations has been established. This resembles the creation of vertical interconnects consisting of individual and multiple multiwalled CNTs. From this base, a concept for the assembly of CNT based, vertical, surrounding-gate transistors is presented. |
| Databáze: | OpenAIRE |
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