Modelling of impedance dispersion in lateral β-Ga2O3 MOSFETs due to parallel conductive Si-accumulation layer

Autor:	Zequan Chen, Abhishek Mishra, Aditya K. Bhat, Matthew D. Smith, Michael J. Uren, Sandeep Kumar, Masataka Higashiwaki, Martin Kuball
Rok vydání:	2023
Předmět:	General Engineering General Physics and Astronomy
Zdroj:	Applied Physics Express. 16:044002
ISSN:	1882-0786 1882-0778
Popis:	Frequency dispersion of impedance in lateral β-Ga2O3 MOSFETs has been characterized and a model has been established to explain the behavior. The dispersion occurs due to resistive and capacitive coupling between terminal contact pads and the buried conducting layer associated with the accumulation of Si contaminant at the unintentionally-doped epitaxy/substrate interface, which is also responsible for a buried parallel leakage path. Particularly, it is demonstrated that the dispersion is not associated with gate dielectric traps as would often be assumed. A generalized equivalent circuit model, which is capable of reproducing the experimental results, is proposed to explain the observations.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::3e0b7ae1ac567467ff29f33fd75acf74 https://doi.org/10.35848/1882-0786/accc09 Zobrazit plný text záznamu