Introduction of the MC3-II/GP system, medium current ion implanter with enhanced multi-charge beam current

Autor: Takahashi Yuji, Makoto Sano, Masamitsu Shinozuka, Kazuyoshi Ueno, Miyuki Shiraishi, Mitsukuni Tsukihara, Tetsuya Kudo, Michiro Sugitani, Yasuhiko Kimura, Masazumi Koike, Hiroyuki Kariya, Fumiaki Sato, Sho Kawatsu, Yuji Ishida
Rok vydání: 2012
Předmět:
Zdroj: AIP Conference Proceedings.
ISSN: 0094-243X
DOI: 10.1063/1.4766557
Popis: The MC3-II/GP is a leading-edge single-wafer medium-current ion implanter, newly developed by SEN Corporation. It demonstrates exceptional productivity based on a high speed wafer-handling station and enhanced beam current. It covers a substantively wider energy range in order to fully meet advanced device requirements. Retaining the superior features of the MC3-II/WR, the MC3-II/GP provides a remarkable increase of multiply-charged beam current coupled with longer ion source lifetime. Another advanced feature of the MC3-II/GP is a 30 second or 14% reduction in auto beam setup time. These improvements enable a fabrication line to reduce the total number of ion implanters and dramatically reduce COO.
Databáze: OpenAIRE