| Autor: |
Tanaka Takashi, Kazuhito Kamei, Kazuhiko Kusunoki, Akihiro Yauchi, Nobuyoshi Yashiro |
| Rok vydání: |
2008 |
| Předmět: |
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| Zdroj: |
Materials Science Forum. :187-190 |
| ISSN: |
1662-9752 |
| DOI: |
10.4028/www.scientific.net/msf.600-603.187 |
| Popis: |
Top seeded solution growth of SiC on on-axis 6H-SiC was performed using Si solvent at growth temperature as high as 1645-1870°C. It was found that different polytypes of SiC layers were grown on 6H-SiC depending on gas species during growth. The growth under He atmosphere produced 6H-SiC homoepitaxial layers. On the other hand, the growth under N2-He atmosphere led to 3C-SiC epitaxial layers. It was obvious that the nitrogen dissolved in solvent strongly favoured the 3C-SiC polytype formation on 6H-SiC. We also conducted characterization of 3C-SiC layers grown on 6H-SiC (0001)Si by TEM, molten KOH etching and precise XRD measurement. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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