Detailed light‐current‐voltage analysis of GaP electroluminescent diodes
| Autor: | J. M. Ralston |
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| Rok vydání: | 1973 |
| Předmět: | |
| Zdroj: | Journal of Applied Physics. 44:2635-2641 |
| ISSN: | 1089-7550 0021-8979 |
| Popis: | The light‐current‐voltage (LIV) characteristics of both red‐ and green‐emitting GaP p‐n junctions have been analyzed in detail at room temperature. Device current has been quantitively and accurately decomposed into components corresponding to the Sah‐Noyce‐Shockley space‐charge recombination and to diffusion current. Data analysis is performed rapidly using an automatic iterative procedure developed for this purpose. In the course of calculation, diode resistance in series with the junction is measured and corrected for, thus considerably extending the upper limit of bias current which may be usefully studied. This study has also determined the current dependence of injection efficiency, electroluminescent quantum efficiency, and the effective luminescent recombination efficiency of the bulk semiconductor region adjacent to the junction. Although this method is applicable to broad classes of junction devices, its use involves certain limitations and ambiguities, which are explicitly discussed. This analy... |
| Databáze: | OpenAIRE |
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